30v p-channel mosfet general description product summary v ds i d (at v gs = -10v) -50a r ds(on) (at v gs = -10v) < 6.2m w r ds(on) (at v gs = -6v) < 8.9m w 100% uis tested 100% r g tested symbol v ds -30v the siss27dn uses advanced trench technology to provide excellent r ds(on) with low gate charge. this device is ideal for load switch and battery pr otection applications. ? rohs and halogen-free compliant v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted drain-source voltage -30 top view bottom pin 1 top view 1 2 3 4 8 7 6 5 g d s v ds v gs i dm i ar , i as e ar , e as t j , t stg symbol t 10s steady-state steady-state r q jc thermal characteristics maximum junction-to-case c/w c/w maximum junction-to-ambient a d 1.1 55 1.5 power dissipation b w power dissipation a p dsm w t a =70c 83 4 t a =25c a t a =70c -25 i d -50 -39 t c =25c t c =100c a -44 a v 25 gate-source voltage continuous drain current g t a =25c i dsm v drain-source voltage -30 maximum junction-to-ambient a c/w r q ja 16 45 20 c -210 pulsed drain current c units repetitive avalanche energy l=0.1mh c mj avalanche current c -20 continuous drain current 97 parameter typ max t c =25c 6.25 33 t c =100c junction and storage temperature range -55 to 150 p d SISS27DN-T1-GE3 powerpak 1212-8s s m d t y p e m o s f e t
symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -1.7 -2.2 -2.8 v i d(on) -210 a 5.1 6.2 t j =125c 7.6 9.2 v gs =-6v, id=-20a 7.1 8.9 m w 10.7 m w g fs 46 s v sd -0.7 -1 v i s -50 a c iss 1960 2450 2940 pf c oss 380 550 720 pf c rss 220 370 520 pf r g 7 14 28 w q g (10v) 33 42 51 nc q g (4.5v) 16 21 26 nc q gs 5.5 7 8.5 nc q gd 7 12 17 nc t 9.5 ns drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-20a reverse transfer capacitance v gs =0v, v ds =-15v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a v ds =v gs i d =-250 m a v ds =0v, v gs = 25v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage r ds(on) static drain-source on-resistance m w i s =-1a,v gs =0v v ds =-5v, i d =-20a v gs =-4.5v, i d =-10a gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =-10v, v ds =-15v, i d =-20a gate source charge gate drain charge total gate charge maximum body-diode continuous current g input capacitance output capacitance turn-on delaytime dynamic parameters t d(on) 9.5 ns t r 10 ns t d(off) 104 ns t f 78 ns t rr 20 25 30 ns q rr 37 47 57 nc body diode reverse recovery time i f =-20a, di/dt=500a/ m s turn-off fall time body diode reverse recovery charge i f =-20a, di/dt=500a/ m s turn-on delaytime turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =0.75 w , r gen =3 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s value and the maximum allowed junction tempera ture of 150 c. the value in any given application depends on the user's specific board de sign. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is limited by package . h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. s m d t y p e m o s f e t
typical electrical and thermal characteristics 17 5 2 10 0 18 0 20 40 60 80 100 120 1 2 3 4 5 6 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 3 4 5 6 7 8 9 0 5 10 15 20 25 30 r ds(on) (m w w w w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-6v i d =-20a v gs =-10v i d =-20a 25 c 125 c v ds =-5v v gs =-6v v gs =-10v 0 20 40 60 80 100 120 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-3.5v -5v -6v,-8v,-10v -4v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 125 c (note e) 1 5 9 13 17 21 3 4 5 6 7 8 9 10 r ds(on) (m w w w w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =-20a 25 125 s m d t y p e m o s f e t
typical electrical and thermal characteristics 17 5 2 10 0 18 0 2 4 6 8 10 0 10 20 30 40 50 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 3000 3500 4000 0 5 10 15 20 25 30 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss 0 50 100 150 200 250 300 350 400 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction - to - c oss c rss v ds =-15v i d =-20a t j(max) =150 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe 10 m s dc r ds(on) t j(max) =150 c t c =25 c 100 m s 1ms 40 figure 10: single pulse power rating junction - to - case (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 9: maximum forward biased safe operating area (note f) r q jc =1.5 c/w s m d t y p e m o s f e t
typical electrical and thermal characteristics 17 5 2 10 0 18 10 100 1000 1 10 100 1000 -i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (note c) 0 10 20 30 40 50 60 70 80 90 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 13: power de-rating (note f) 0 10 20 30 40 50 60 0 25 50 75 100 125 150 -current rating i d (a) t case ( c) figure 14: current de - rating (note f) t a =25 c 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction - to - t a =25 c t a =150 c t a =100 c t a =125 c 40 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 14: current de - rating (note f) figure 15: single pulse power rating junction - to - ambient (note h) r q ja =55 c/w s m d t y p e m o s f e t
vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v id vds unclamped inductive switching (uis) test circuit & waveforms vds l 2 e = 1/2 li ar ar bv vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) vdd vgs vgs rg dut vdc vgs id vgs - + bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i s m d t y p e m o s f e t
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